PMOS transistor with improved mobility of the carriers
US9356090B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 6, 2015 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the <110> type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.