Method to form self-aligned high density nanocrystals
US9356106B2 · kind B2 · utility
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16References
15Claims
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Key dates
| Filing date | Sep 4, 2014 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Sep 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating dense arrays of electrically conductive nanocrystals that are self-aligned in depressions at target locations on a substrate, and semiconductor devices configured with nanocrystals situated within a gate stack as a charge storage area for a nonvolatile memory (NVM) device, are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.