Remote gate protection diode for field effect transistors

US9356144B1 · kind B1 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• Philip W. Mason · Greensboro, US
• Daniel Charles Kerr · Oak Ridge, US
• Michael Carroll · Orlando, US

Key dates

• Filing date: Aug 11, 2010
• Grant date: May 31, 2016
• Expiry date: Nov 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/611

Abstract

The present disclosure relates to gate oxide protection circuits, which are used to protect the gate oxides of field effect transistor (FET) elements from over voltage conditions, particularly during situations in which the gate oxides are particularly vulnerable, such as during certain manufacturing stages. Each gate oxide protection circuit may be coupled to a corresponding FET element through corresponding first and second resistive elements, which are coupled to a corresponding gate connection node and a corresponding first connection node, respectively, of the FET element. The gate connection node and the first connection node are electrically adjacent to opposite sides of the gate oxide of the FET element. Each gate oxide protection circuit may protect its corresponding FET element by limiting a voltage between the gate connection node and the first connection node.