High efficiency group III-V compound semiconductor solar cell with oxidized window layer

US9356162B2 · kind B2 · utility

Assignee

• MICROLINK DEVICES, INC. · US

Inventors

• Noren Pan · Wilmette, US
• Christopher Youtsey · Libertyville, US
• David McCallum · West Chicago, US
• Victor C. Elarde · Evanston, US
• John Dallesasse · Geneva, US

Key dates

• Filing date: Jan 28, 2010
• Grant date: May 31, 2016
• Expiry date: Dec 7, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.