Composition for forming fine resist pattern and pattern formation method using same
US9360756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2013 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Oct 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.