Patent · US Active

Sub-lithographic patterning of magnetic tunneling junction devices

US9362336B2 · kind B2 · utility

12Cited by
5References
11Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 11, 2014
Grant dateJun 7, 2016
Priority date—
Expiry dateSep 11, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/85
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through a hard mask layer to an MTJ stack. The method also includes depositing a conductive material into the transferred keyhole pattern and on an MTJ stack. The method also includes removing the hard mask layer to create a conductive hard mask pillar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.