Inventor · San Diego, CA, US

Yu Lu

31Patents
11h-index
19Co-inventors
61Inventor score

Filing activity: Dec 17, 2013 → Nov 21, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US9343659B1 Embedded magnetoresistive random access memory (MRAM) integration with top contacts Electricity 39 Active
US10043967B2 Self-compensation of stray field of perpendicular magnetic elements Electricity 36 Active
US9142762B1 Magnetic tunnel junction and method for fabricating a magnetic tunnel junction Electricity 23 Active
US9437272B1 Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays Physics 23 Active
US9704919B1 High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells Electricity 22 Active
US9269893B2 Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch Electricity 17 Active
US9406875B2 MRAM integration techniques for technology scaling Electricity 16 Active
US9576801B2 High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory Electricity 15 Active
US9614143B2 De-integrated trench formation for advanced MRAM integration Electricity 12 Active
US9362336B2 Sub-lithographic patterning of magnetic tunneling junction devices Electricity 12 Active
US9461094B2 Switching film structure for magnetic random access memory (MRAM) cell Physics 11 Active
US9496314B1 Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area Electricity 8 Active
US9595662B2 MRAM integration techniques for technology scaling Electricity 8 Active
US9318696B2 Self-aligned top contact for MRAM fabrication Electricity 5 Active
US9548096B1 Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods Electricity 5 Active
US9865798B2 Electrode structure for resistive memory device Electricity 4 Active
US10008537B2 Complementary magnetic tunnel junction (MTJ) bit cell with shared bit line Electricity 4 Active
US9490424B2 Sub-lithographic patterning of magnetic tunneling junction devices Electricity 4 Active
US9548333B2 MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance Electricity 4 Active
US9508439B2 Non-volatile multiple time programmable memory device Electricity 3 Active
US9728718B2 Magnetic tunnel junction (MTJ) device array Electricity 3 Active
US9647037B2 Resistive random access memory device with resistance-based storage element and method of fabricating same Electricity 3 Active
US9666792B2 Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements Electricity 3 Active
US10109674B2 Semiconductor metallization structure Electricity 2 Active
US9721634B2 Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.