Heterojunction bipolar transistor

US9362380B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Pascal Chevalier · Bellecombe, FR
• Didier Celi · Voiron, FR
• Jean-Pierre Blanc · Theys, FR
• Alain Chantre · Seyssinet-Pariset, FR

Key dates

• Filing date: Dec 12, 2013
• Grant date: Jun 7, 2016
• Expiry date: Dec 12, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

The present disclosure is directed to a method that includes exposing a surface of a silicon substrate in a first region between first and second isolation trenches, etching the silicon substrate in the first region to form a recess between the first and second isolation trenches, =; and forming a base of a heterojunction bipolar transistor by selective epitaxial growth of a film comprising SiGe in the recess.