Ferroelectric memory and manufacturing method of the same
US9362487B2 · kind B2 · utility
29Cited by
3References
3Claims
0Family size
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Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Sep 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.