Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9362715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Apr 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.