Semiconductor microlithography projection exposure apparatus

US9366977B2 · kind B2 · utility

Assignee

• Carl Zeiss SMT GmbH · DE

Inventors

• Sascha Bleidistel · Aalen, DE
• Olaf Conradi · Sonthofen, DE
• Arif Kazi · Aalen, DE

Key dates

• Filing date: Nov 4, 2011
• Grant date: Jun 14, 2016
• Expiry date: Nov 23, 2034

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B27/0068
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The disclosure relates to an optical correction arrangement including at least one optical element and at least one irradiation mechanism for the targeted local irradiation of the optical element with electromagnetic heating radiation for the targeted local heating of the optical element. The optical correction arrangement also includes a mechanism for dissipating the thermal energy introduced into the optical element by the at least one irradiation mechanism. The disclosure furthermore relates to a projection exposure apparatus for semiconductor lithography including an optical correction arrangement according to the disclosure.