Method of manufacturing a semiconductor device
US9368358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.