Chemical mechanical polishing of silicon carbide comprising surfaces

US9368367B2 · kind B2 · utility

Assignees

• Sinmat, Inc. · US
• University of Florida Research Foundation, INC. · US

Inventors

• Rajiv Singh · Natick, US
• Arul Chakkaravarthi Arjunan · Gainesville, US
• Dibakar Das · Gainesville, US
• Deepika Singh · Gainesville, US
• Abhudaya Mishra · Gilbert, US
• Tanjore V. Jayaraman · Gainesville, US

Key dates

• Filing date: Apr 13, 2009
• Grant date: Jun 14, 2016
• Expiry date: Sep 14, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30625
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.