Dry etching gas and method of manufacturing semiconductor device
US9368394B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a semiconductor substrate; forming a conductive region at least partially in the semiconductor substrate; forming a dielectric layer over the substrate; forming a hard mask over the dielectric layer, the hard mask having an opening over the conductive region; dry etching the dielectric layer by a first etching gas to form a recessed feature, wherein a surface of the conductive region is therefore exposed at a bottom of the recessed feature, and a byproduct film is formed at an inner surface of the recessed feature; and dry etching the dielectric layer by a second etching gas, wherein the second etching gas chemically reacts with the byproduct film and the conductive region, and a sacrificial layer is therefore built up around the bottom of the recessed feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.