Fin type electrostatic discharge protection device

US9368484B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Yu-Chun Chen · Hsinchu, TW
• Ping-Chen Chang · Chunri, TW
• Tien-Hao Tang · Hsinchu, TW
• Kuan-Cheng Su · Taipei, TW

Key dates

• Filing date: May 28, 2015
• Grant date: Jun 14, 2016
• Expiry date: May 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60

Abstract

A fin type ESD protection device includes at least one first fin, at least one second fin, and at least one gate structure. The first fin is disposed on a semiconductor substrate, and a source contact contacts the first fin. The second fin is disposed on the semiconductor substrate, and a drain contact contacts the second fin. The first fin and the second fin extend in a first direction respectively, and the first fin is separated from the second fin. The gate structure is disposed between the source contact and the drain contact. The first fin is separated from the drain contact, and the second fin is separated from the source contact.