Semiconductor device and semiconductor module
US9368589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A semiconductor device includes a first source/drain region and a second source/drain region disposed in an active region of a semiconductor substrate, and a gate structure crossing the active region and disposed between the first and second source/drain regions, the gate structure including a gate electrode having a first part and a second part on the first part, the gate electrode being at a lower level than an upper surface of the active region, an insulating capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an empty space between the active region and the second part of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.