Nonvolatile memory device and method of fabricating the same
US9368645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.