Compositions for etching
US9368647B2 · kind B2 · utility
6Cited by
2References
20Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 12, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Aug 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/689
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.