SiC junction barrier controlled schottky rectifier
US9368650B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2015 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A SiC junction barrier controlled Schottky rectifier includes a SiC substrate, a n-type drift layer, a p-type doping region, a plurality of junction field-effect regions, a first metal layer and a second metal layer. The drift layer is disposed on the SiC substrate. The junction field-effect regions are disposed in the drift layer and are surrounded by the p-type doping region. The first metal layer is disposed on the drift layer. The second metal layer is disposed at one side of the SiC substrate away from the drift layer. Through N circular regions and (N−1) inter-circle regions each connecting two of the circular regions, as well as geometric characteristics of the circular regions and the inter-circle regions, a leakage current of devices is effectively reduced and ruggedness is increased to improve an issue of a large leakage current of a conventional Schottky barrier diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.