Silicon photonics integration method and structure

US9368653B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Solomon Assefa · Ossining, US
• Tymon Barwicz · Yorktown Heights, US
• William M. Green · New York, US
• Marwan H. Khater · New York, US
• Jessie C. Rosenberg · White Plains, US
• Steven M. Shank · Jericho, US

Key dates

• Filing date: Dec 23, 2014
• Grant date: Jun 14, 2016
• Expiry date: Jan 16, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.