Selective layer disordering in III-nitrides with a capping layer
US9368677B2 · kind B2 · utility
2Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2014 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Dec 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/89
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selective layer disordering in a doped III-nitride superlattice can be achieved by depositing a dielectric capping layer on a portion of the surface of the superlattice and annealing the superlattice to induce disorder of the layer interfaces under the uncapped portion and suppress disorder of the interfaces under the capped portion. The method can be used to create devices, such as optical waveguides, light-emitting diodes, photodetectors, solar cells, modulators, laser, and amplifiers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.