Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9368939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2014 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | Dec 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.