Nonvolatile logic gate circuit based on phase change memory

US9369130B2 · kind B2 · utility

Assignee

• Huazhong University of Science and Technology · CN

Inventors

• Xiangshui Miao · Hubei, CN
• Yi Li · Hsinchu, TW
• Yingpeng Zhong · 红钢城街道, CN
• Lei Xu · Beijing, CN
• Huajun SUN · Lo Wu, CN
• Xiaomin Cheng · 红钢城街道, CN

Key dates

• Filing date: May 7, 2015
• Grant date: Jun 14, 2016
• Expiry date: May 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K19/20
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A nonvolatile logic gate circuit based on phase change memories, including a first phase change memory, a second phase change memory, a first controllable switch element and a first resistor, wherein a first end of the first phase change memory serves as a first input end of an AND gate circuit, a first end of the second phase change memory serves as a second input end of the AND gate circuit, a first end of the first controllable switch element is connected to a second end of the first phase change memory, a second end of the first controllable switch element is grounded; one end of the first resistor is connected to the first end of the second phase change memory, the other end of the first resistor is grounded; and the first end of the second phase change memory serves as an output end of the AND gate circuit.