Film portion at wafer edge
US9372406B2 · kind B2 · utility
1Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film layer on a substrate of the wafer is patterned to form a first plurality of areas of the film layer and a second plurality of areas of the film layer. The first plurality of areas of the film layer is removed. The second plurality of areas of the film layer is kept on the substrate. A first portion of the film layer is kept on the substrate. A first edge of the first portion of the film layer is substantially near an edge of the wafer. The first portion of the film layer defines a boundary for the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.