Method of calibrating or exposing a lithography tool
US9373552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2015 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of calibrating or monitoring an exposing tool including forming a substrate pattern in a substrate, wherein forming the substrate pattern includes providing a first patterned photo resist layer having an etch coating layer disposed thereon and using the first patterned photo resist layer and the etch coating layer to pattern an underlying layer. The patterned underlying layer is then used as a masking element when etching the substrate pattern into the substrate. A second photo resist pattern is formed over the substrate pattern. An overlay measurement is executed of the second photo resist pattern to the substrate pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.