Semiconductor device and method of manufacture thereof
US9373648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This semiconductor device (100A) includes: an oxide layer (15) which includes a semiconductor region (5) and a conductor region (7) that contacts with the semiconductor region; a source electrode (6s) and a drain electrode (6d) which are electrically connected to the semiconductor region; an insulating layer (11) formed on the source and drain electrodes; a transparent electrode (9) arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line (6a) formed out of the same conductive film as the source electrode; and a gate extended line (3a) formed out of the same conductive film as a gate electrode (3). The source line is electrically connected to the gate extended line via a transparent connecting layer (9a) which is formed out of the same conductive film as the transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.