Integrated circuits with capacitors and methods of producing the same
US9373680B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2015 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Feb 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits with MIM capacitors and methods for producing them with metal and oxide hard masks are provided. Embodiments include disposing a dielectric layer over an ILD, the ILD including a contact therethrough in a first region; forming a capacitor trench in the dielectric layer in a second region; forming a MIM hard mask by: disposing a first metal hard mask in the first region and in the capacitor trench in the second region; disposing an oxide hard mask over the first metal hard mask; and disposing a second metal hard mask over the oxide hard mask; forming a metal line trench through the MIM hard mask in the first region, including over the contact, while masking the second region; and removing portions of the MIM hard mask in the capacitor trench, wherein a remaining portion of the first metal hard mask comprises a bottom plate of an MIM capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.