System and method for integrated circuits with cylindrical gate structures

US9373694B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• De Yuan Xiao · Shanghai, CN
• Guo Qing Chen · Boise, US
• Roger Lee · Boise, US
• Chin Fu Yen · Shanghai, CN
• Su Xing · Singapore, SG
• Xiao Lu Huang · Shanghai, CN
• Yong Yang · Charlottenberg, SE

Key dates

• Filing date: Mar 21, 2013
• Grant date: Jun 21, 2016
• Expiry date: Dec 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6218
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device and method for integrated circuits with surrounding gate structures are disclosed. The device includes a semiconductor substrate and a fin structure on the semiconductor substrate. The fin structure is doped with a first conductivity type and includes a source region at one distal end and a drain region at the opposite distal end. The device further includes a gate structure overlying a channel region disposed between the source and drain regions of the fin structure. The fin structure has a rectangular cross-sectional bottom portion and an arched cross-sectional top portion. The arched cross-sectional top portion is semi-circular shaped and has a radius that is equal to or smaller than the height of the rectangular cross-sectional bottom portion. The source, drain, and the channel regions each are doped with dopants of the same polarity and the same concentration.