Semiconductor device and method of manufacturing the same
US9373703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.