Silicon carbide semiconductor device and method of manufacture thereof
US9373713B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2015 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device and method of manufacture thereof is made by providing a channel control zone which has impurity concentration distribution increased gradually from a first doping boundary to reach a maximum value between the first doping boundary and a second doping boundary, then decreased gradually toward the second doping boundary, so that the silicon carbide semiconductor device is formed with a lower conduction resistance and increased drain current without sacrificing threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.