Resistive random access memory and method for fabricating the same
US9373789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2014 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Oct 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.