Plasma pre-treatment for improved uniformity in semiconductor manufacturing
US9378954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a semiconductor devices are provided. A plasma pre-treatment operation is performed on a photoresist pattern formed over a material disposed over a substrate, and reduces critical dimensions (CDs) of features of the photoresist pattern to a greater extent at a central portion of the substrate than at outer portions of the substrate, thereby forming a treated pattern with a gradient of CDs. The material is then etched using the treated pattern as a photomask. An overetch operation that tends to reduce CDs of the etched features of the material to a greater extent at outer portions of the substrate than at the central portion of the substrate, is employed. The plasma pre-treatment operation is designed in conjunction with the overetch characteristics and, in combination, the operations produce etched features having CDs with a high degree of uniformity across the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.