High throughput heated ion implantation system and method
US9378992B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Nov 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.