Method for manufacturing a microelectronic device including depositing identical or different metallic layers on the same wafer

US9379024B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Claire Fournier · Pont-Saint-Esprit, FR
• Frederic Gaillard · Grenoble, FR
• Fabrice Nemouchi · Moirans, FR

Key dates

• Filing date: Jan 7, 2015
• Grant date: Jun 28, 2016
• Expiry date: Jan 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0193

Abstract

A method for manufacturing a microelectronic device is provided, including forming a first semiconductor material layer on a first region of a top surface of a substrate; and forming a second semiconductor material layer on a second region of the top surface of the substrate distinct from the first region, forming a first metallic layer above the first layer; forming a first contact layer of a first intermetallic compound or solid solution; forming a first sacrificial layer in an upper portion of the first contact layer; forming a second sacrificial layer in an upper portion of the second layer; removing all of the second sacrificial layer so as to expose a residual portion of the second layer; partially removing the first sacrificial layer; forming a second metallic layer above said residual portion; and forming a second contact layer of a second intermetallic compound or solid solution.