Grounding dummy gate in scaled layout design

US9379058B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Stanley Seungchul Song · San Diego, US
• Zhongze Wang · San Diego, US
• Ohsang Kwon · San Diego, US
• Kern Rim · Yorktown Heights, US
• John Jianhong Zhu · San Diego, US
• Xiangdong Chen · Irvine, US
• Foua Vang · Lemon Grove, US
• Raymond George Stephany · Austin, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: May 9, 2014
• Grant date: Jun 28, 2016
• Expiry date: May 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/966
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.