Semiconductor device
US9379181B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Apr 22, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | May 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor substrate, an isolation trench is formed, which passes through the first base region, extends to the first drift region, and surrounds an outer periphery of the temperature sensing diode part. At least a part of one of side walls of the isolation trench is in contact with the power semiconductor element part, and the other side wall of the isolation trench is in contact with the temperature sensing diode part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.