Method for forming nanowire and semiconductor device formed with the nanowire
US9379182B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming germanium nanowires comprises forming a semiconductor fin structure including alternating fin and shallow trench structures, etching a top portion of the fin to form a fin recess and depositing a germanium-based semiconductor into the fin recess as a germanium-based plug. The method comprises etching the shallow trench structure to expose the germanium-based semiconductor side faces. The exposed germanium-based semiconductor undergoes annealing to form high carrier mobility nanowire structures. The nanowire structures can also be formed of different diameters by selective oxidation of some of the deposited germanium-based plugs. Alternately, forming fin structures of different widths results in deposited germanium plugs of different widths to be deposited to form different thicknesses of nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.