High electron mobility transistor including an isolation region
US9379191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2011 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. The gate electrode includes a refractory metal. A depletion region is disposed in the carrier channel and under the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.