Semiconductor device
US9379224B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Aug 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device in which a diode region and an IGBT region are formed on a same semiconductor substrate is provided. The diode region includes a plurality of first conductivity type anode layers exposed to a surface of the semiconductor substrate and separated from each other. The IGBT region includes a plurality of first conductivity type body contact layers that are exposed to the surface of the semiconductor substrate and separated from each other. The anode layer includes at least one or more of the first anode layers. The first anode layer is formed in a position in the proximity of at least IGBT region, and an area of a plane direction of the semiconductor substrate in each of the first anode layers is larger than the area of a plane direction of the semiconductor substrate in the body contact layer in the closest proximity of the diode region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.