Transistor having increased breakdown voltage

US9379231B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Michael A. Briere · West Greenwich, US
• Naresh Thapar · San Diego, US
• Reenu Garg · Torrance, US

Key dates

• Filing date: Jan 24, 2013
• Grant date: Jun 28, 2016
• Expiry date: Jan 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A transistor includes a source finger electrode having a source finger electrode beginning and a source finger electrode end. The transistor also includes a drain finger electrode with a curved drain finger electrode end having an increased radius of curvature. The resulting decreased electric field at the curved drain finger electrode end allows for an increased breakdown voltage and a more robust and reliable transistor.