Reenu Garg
5Patents
1h-index
5Co-inventors
40Inventor score
Filing activity: Jan 24, 2013 → May 31, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9379231B2 | Transistor having increased breakdown voltage | Electricity | 3 | Active |
| US9070755B2 | Transistor having elevated drain finger termination | Electricity | 0 | Active |
| US11688777B2 | Semiconductor device and inverter | Electricity | 0 | Active |
| US12068379B2 | Semiconductor device having a lateral transistor device and an inverter that includes the semiconductor device | Electricity | 0 | Active |
| US9564498B2 | Transistor with elevated drain termination | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.