Magneto-electric voltage controlled spin transistors
US9379232B2 · kind B2 · utility
1Cited by
0References
8Claims
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Assignee
Inventors
Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.