Semiconductor device having fin-type field effect transistor and method of manufacturing the same
US9379244B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a first region and a second region, a first MOS transistor including a first fin structure and a first gate electrode in the first region, the first fin structure having a first buffer pattern, a second buffer pattern, and a first channel pattern which are sequentially stacked on the substrate, and a second MOS transistor including a second fin structure and a second gate electrode in the second region, the second fin structure having a third buffer pattern and a second channel pattern which are sequentially stacked on the substrate. Related fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.