Symmetric tunnel field effect transistor
US9379253B1 · kind B1 · utility
5Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2015 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.