Patent · US Active

Symmetric tunnel field effect transistor

US9379253B1 · kind B1 · utility

5Cited by
16References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 2015
Grant dateJun 28, 2016
Priority date
Expiry dateAug 27, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02581
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.