Fabrication methods for monolithically isled back contact back junction solar cells

US9379258B2 · kind B2 · utility

Assignee

• Solexel, Inc. · US

Inventors

• Pawan Kapur · Palo Alto, US
• Anand Deshpande · Cupertino, US
• Virendra V. Rana · Berkeley Heights, US
• Mehrdad M. Moslehi · Dallas, US
• Sean M. Seutter · Fremont, US

Key dates

• Filing date: Sep 22, 2014
• Grant date: Jun 28, 2016
• Expiry date: Sep 22, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.