Magnetoresistive effect element and magnetic random access memory using the same
US9379312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Jun 28, 2016 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.