Patent · US Active

Manufacturable laser diode

US9379525B2 · kind B2 · utility

57Cited by
70References
37Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 23, 2014
Grant dateJun 28, 2016
Priority date
Expiry dateJun 23, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/0216
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.