Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications
US9382268B1 · kind B1 · utility
11Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Jan 7, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are sulfur containing organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics. The disclosed precursors have the following formula:wherein L1 is a sulfur atom and L2 may be chosen from a sulfur atom, an oxygen atom, or a nitrogen atom; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; and L1, L2 and the carbon bridge form a monoanionic ligand bonded to silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.