Patent · US Active

Ion-sensitive layer structure for an ion-sensitive sensor and method for manufacturing the same

US9383334B2 · kind B2 · utility

0Cited by

12References

25Claims

0Family size

Assignee

Endress+Hauser Conducta GmbH+Co. KG · DE

Inventors

Christian Kunath · Dresden, DE
Eberhard Kurth · Radebeul, DE
Torsten Pechstein · Radebeul, DE

Key dates

Filing date	Aug 20, 2014
Grant date	Jul 5, 2016
Priority date	—
Expiry date	Aug 20, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28229
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

In a method for manufacturing an ion-sensitive structure for an ion-sensitive sensor, first a semiconductor substrate bearing an oxide layer is provided, whereupon a metal oxide layer and a metal layer are deposited and tempered, in order to obtain a layer sequence having a crystallized metal oxide layer and an oxidized and crystallized metal layer on the semiconductor substrate bearing the oxide layer. In such case, the metal oxide layer and the metal layer have a compatible metal element, and the coating thickness dMOX of the metal oxide layer is greater than the coating thickness dMET of the metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.