Patent · US Active

Plasma processing apparatus

US9384946B2 · kind B2 · utility

0Cited by
3References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 2, 2012
Grant dateJul 5, 2016
Priority date
Expiry dateMar 30, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68785
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.